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Annual Conference on Nuclear and Space Radiation Effects, 18th, University of Washington, Seattle, WA, July 21-24, 1981, ProceedingsSingle event upset phenomena are discussed, taking into account cosmic ray induced errors in IIL microprocessors and logic devices, single event upsets in NMOS microprocessors, a prediction model for bipolar RAMs in a high energy ion/proton environment, the search for neutron-induced hard errors in VLSI structures, soft errors due to protons in the radiation belt, and the use of an ion microbeam to study single event upsets in microcircuits. Basic mechanisms in materials and devices are examined, giving attention to gamma induced noise in CCD's, the annealing of MOS capacitors, an analysis of photobleaching techniques for the radiation hardening of fiber optic data links, a hardened field insulator, the simulation of radiation damage in solids, and the manufacturing of radiation resistant optical fibers. Energy deposition and dosimetry is considered along with SGEMP/IEMP, radiation effects in devices, space radiation effects and spacecraft charging, EMP/SREMP, and aspects of fabrication, testing, and hardness assurance.
Document ID
19820034741
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Tasca, D. M.
(General Electric Co., Space Div., Philadelphia PA, United States)
Date Acquired
August 10, 2013
Publication Date
December 1, 1981
Subject Category
Electronics And Electrical Engineering
Accession Number
82A18276
Distribution Limits
Public
Copyright
Other

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