NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
An advanced, radiation hardened bulk CMOS/LSI technologyAn advanced, second generation, bulk, Si-gate CMOS process is described. This process is capable of producing LSI and VLSI parts that are latch-up free and hardened to total dose levels in excess of 2 x 10 to the 5th rad-Si for applications in space and weapons radiation environments. Two memories designed to use this process are also described. Both circuits are 4096-bit, static CMOS RAMs.
Document ID
19820034749
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Schroeder, J. E.
(Harris Corp. Melbourne, FL, United States)
Lichtel, R. L.
(Harris Corp. Melbourne, FL, United States)
Gingerich, B. L.
(Harris Corp. Programs Div., Melbourne, FL, United States)
Date Acquired
August 10, 2013
Publication Date
December 1, 1981
Subject Category
Electronics And Electrical Engineering
Accession Number
82A18284
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available