Fast recovery, high voltage silicon diodes for AC motor controllersThe fabrication and characterization of a high voltage, high current, fast recovery silicon diode for use in AC motor controllers, originally developed for NASA for use in avionics power supplies, is presented. The diode utilizes a positive bevel PIN mesa structure with glass passivation and has the following characteristics: peak inverse voltage - 1200 volts, forward voltage at 50 amperes - 1.5 volts, reverse recovery time of 200 nanoseconds. Characterization data for the diode, included in a table, show agreement with design concepts developed for power diodes. Circuit diagrams of the diode are also given.
Document ID
19820053391
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Balodis, V. (Power Transistor Co. Torrance, CA, United States)
Berman, A. H. (Power Transistor Co. Torrance, CA, United States)
Gaugh, C. (Power Transistor Co. Torrance, CA, United States)