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In situ monitoring of liquid phase electroepitaxial growthIn situ monitoring of the layer thickness during liquid phase electroepitaxy (LPEE) was achieved with a submicron resolution through precise resistance measurements. The new approach to the study and control of LPEE was applied to growth of undoped and Ge-doped GaAs layers. The in situ determined growth kinetics was found to be in excellent agreement with theory.
Document ID
19820060659
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Okamoto, A. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Isozumi, S. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Lagowski, J. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Gatos, H. C. (MIT Cambridge, MA, United States)
Date Acquired
August 10, 2013
Publication Date
September 1, 1982
Publication Information
Publication: Electrochemical Society
Subject Category
Solid-State Physics
Accession Number
82A44194
Distribution Limits
Public
Copyright
Other

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