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Measuring Diffusion and Recombination in Polycrystalline SiliconLight-beam-induced currents yield information about solar cell material. Apparatus measures short-circuit current generated when spot of concentrated light is scanned across grains and grain boundaries in material under test. Technique used to evaluate SOC samples for diffusion and recombination effects of cell processing and chemical and structural defects.
Document ID
19830000039
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Zook, J. D.
(Honeywell, Inc.)
Date Acquired
August 11, 2013
Publication Date
August 1, 1983
Publication Information
Publication: NASA Tech Briefs
Volume: 7
Issue: 3
ISSN: 0145-319X
Subject Category
Materials
Report/Patent Number
NPO-15601
Accession Number
83B10039
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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