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Growing Crystals for Infrared DetectorsUnidirectional solidification yields bulk crystals with compositional homogeneity. Unidirectionaly crystal-growth furnace assembly travels vertically so crystal grows upward from bottom tapered end of ampoule. Separately controlled furnaces used for hot (upper) and cold (lower) zones. New process produces ingots with radial compositional homogeneity suitable for fabricating infrared detectors.
Document ID
19830000465
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Lehoczky, S. L.
(McDonnell Douglas Corp.)
Szofran, F. R.
(McDonnell Douglas Corp.)
Date Acquired
August 11, 2013
Publication Date
April 1, 1984
Publication Information
Publication: NASA Tech Briefs
Volume: 8
Issue: 1
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
MFS-25786
Accession Number
83B10465
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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