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A comparison of radiation damage in transistors from cobalt-60 gamma rays and 2.2 MeV electronsThe total ionizing dose response of ten bipolar transistor types has been measured using Co-60 gamma rays and 2.2 MeV electrons from exposure levels of 750, 1500, and 3000 Gy(Si). Gain measurements were made for a range of collector-emitter voltages and collector currents.
Document ID
19830036316
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Nichols, D. K. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Price, W. E. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Gauthier, M. K. (California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Date Acquired
August 11, 2013
Publication Date
December 1, 1982
Subject Category
Electronics And Electrical Engineering
Accession Number
83A17534
Distribution Limits
Public
Copyright
Other

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