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X-ray photoelectron spectroscopic study of the oxide removal mechanism of GaAs /100/ molecular beam epitaxial substrates in in situ heatingA standard cleaning procedure for GaAs (100) molecular beam epitaxial (MBE) substrates is a chemical treatment with a solution of H2SO4/H2O2/H2O, followed by in situ heating prior to MBE growth. X-ray photoelectron spectroscopic (XPS) studies of the surface following the chemical treatment show that the oxidized As is primarily As(+ 5). Upon heating to low temperatures (less than (350 C) the As(+ 5) oxidizes the substrate to form Ga2O3 and elemental As, and the As(+ 5) is reduced to As(+ 3) in the process. At higher temperatures (500 C), the As(+ 3) and elemental As desorb, while the Ga(+ 3) begins desorbing at about 600 C.
Document ID
19830038776
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Vasquez, R. P.
(California Inst. of Tech. Pasadena, CA, United States)
Lewis, B. F.
(California Inst. of Tech. Pasadena, CA, United States)
Grunthaner, F. J.
(California Institute of Technology Pasadena, CA, United States)
Date Acquired
August 11, 2013
Publication Date
February 1, 1983
Publication Information
Publication: Applied Physics Letters
Volume: 42
Subject Category
Inorganic And Physical Chemistry
Accession Number
83A19994
Funding Number(s)
CONTRACT_GRANT: N00014-82-F-0080
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other

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