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Compositional depth profile of a native oxide LPCVD MNOS structure using X-ray photoelectron spectroscopy and chemical etchingIt is pointed out that there is no report of an unambiguous analysis of the composition and interfacial structure of MNOS (metal-nitride oxide semiconductor) systems, despite the technological importance of these systems. The present investigation is concerned with a study of an MNOS structure on the basis of a technique involving the use of X-ray photoelectron spectroscopy (XPS) with a controlled stopped-flow chemical-etching procedure. XPS is sensitive to the structure of surface layers, while stopped-flow etching permits the controlled removal of overlying material on a scale of atomic layers, to expose new surface layers as a function of thickness. Therefore, with careful analysis of observed intensities at measured depths, this combination of techniques provides depth resolution between 5 and 10 A. According to the obtained data there is intact SiO2 at the substrate interface. There appears to be a thin layer containing excess bonds to silicon on top of the SiO2.
Document ID
19830044844
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Wurzbach, J. A.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Grunthaner, F. J.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Date Acquired
August 11, 2013
Publication Date
March 1, 1983
Publication Information
Publication: Electrochemical Society
Subject Category
Inorganic And Physical Chemistry
Accession Number
83A26062
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other

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