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Diffraction coupled phase-locked semiconductor laser arrayA new monolithic, diffraction coupled phase-locked semiconductor laser array has been fabricated. Stable narrow far-field patterns (approximately 3 deg) and peak power levels of 1 W have been obtained for 100-micron-wide devices with threshold currents as low as 250 mA. Such devices may be useful in applications where high power levels and stable radiation patterns are needed.
Document ID
19830044985
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1063/1.94025
Authors
Katz, J. (California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Margalit, S. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Yariv, A. (California Institute of Technology Pasadena, CA, United States)
Date Acquired
August 11, 2013
Publication Date
April 1, 1983
Publication Information
Publication: Applied Physics Letters
Volume: 42
Subject Category
Lasers And Masers
Accession Number
83A26203
Distribution Limits
Public
Copyright
Other

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