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Observation of defects in mercury cadmium telluride crystals grown by chemical vapor transportA mixture of nitric and hydrochloric acids was found to yield etch pits on mercury cadmium telluride crystals grown by chemical vapor transport using iodine or mercuric iodide as the transport agent. Two types of pits were observed by optical microscopy: triangular pyramidal and round saucer shaped pits. Transmission electron microscopy confirmed that two types of defects were present: dislocations and second phase occlusions. The present study suggests that the defects are near the crystal surface and therefore will probably not significantly affect the electrical characteristics.
Document ID
19830049130
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Irene, E. A.
(IBM Watson Research Center Yorktown Heights, NY, United States)
Tierney, E.
(IBM Thomas J. Watson Research Center Yorktown Heights, NJ, United States)
Wiedemeier, H.
(IBM Watson Research Center Yorktown Heights, NY, United States)
Chandra, D.
(Rensselaer Polytechnic Institute, Troy, NY, United States)
Date Acquired
August 11, 2013
Publication Date
April 15, 1983
Publication Information
Publication: Applied Physics Letters
Volume: 42
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
83A30348
Funding Number(s)
CONTRACT_GRANT: NAS8-32936
Distribution Limits
Public
Copyright
Other

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