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The electrical behavior of GaAs-insulator interfaces - A discrete energy interface state modelThe relationship between the electrical behavior of GaAs Metal Insulator Semiconductor (MIS) structures and the high density discrete energy interface states (0.7 and 0.9 eV below the conduction band) was investigated utilizing photo- and thermal emission from the interface states in conjunction with capacitance measurements. It was found that all essential features of the anomalous behavior of GaAs MIS structures, such as the frequency dispersion and the C-V hysteresis, can be explained on the basis of nonequilibrium charging and discharging of the high density discrete energy interface states.
Document ID
19830050168
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Kazior, T. E.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Lagowski, J.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Gatos, H. C.
(MIT Cambridge, MA, United States)
Date Acquired
August 11, 2013
Publication Date
May 1, 1983
Publication Information
Publication: Journal of Applied Physics
Volume: 54
ISSN: 0021-8979
Subject Category
Solid-State Physics
Accession Number
83A31386
Distribution Limits
Public
Copyright
Other

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