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Interfacial electrical properties of ion-beam sputter deposited amorphous carbon on siliconAmorphous, 'diamond-like' carbon films have been deposited on Si substrates, using ion-beam sputtering. The interfacial properties are studied using capacitance and conductance measurements. Data are analyzed using existing theories for interfacial electrical properties. The density of electronic states at the interface, along with corresponding time constants are determined.
Document ID
19830052702
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Khan, A. A.
(Nebraska Univ. Lincoln, NE, United States)
Woollam, J. A.
(Nebraska, University Lincoln, NE, United States)
Chung, Y.
(Universal Energy Systems, Inc., Dayton OH, United States)
Banks, B.
(NASA Lewis Resarch Center Cleveland, OH, United States)
Date Acquired
August 11, 2013
Publication Date
May 1, 1983
Publication Information
Publication: IEEE Electron Device Letters
Volume: EDL-4
ISSN: 0193-8576
Subject Category
Solid-State Physics
Accession Number
83A33920
Funding Number(s)
CONTRACT_GRANT: NAG3-95
Distribution Limits
Public
Copyright
Other

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