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Quantum-chemical modeling of boron and noble gas dopants in siliconThe electron effects of the presence of boron and noble gas dopants in a model silicon lattice were investigated using a self-consistent charge extended Hueckel program. The extent of electronic interaction of the noble gas with the lattice is given by: Kr greater than Ar greater than Ne. Theoretically, boron diffusion in the presence of neon, argon or krypton was examined using a self-consistent charge extended Hueckel program. The net energy of interaction between boron and neon is strongly repulsive while argon-boron exhibits a region of relative stability; krypton exhibits behavior similar to argon though no region of stability was found for the range of separations used in the calculations. Finally, it is noted, from the relative energy of the topmost filled molecular orbital associated with boron (in an interstitial position), that activation of the boron does not require boron movement but can be accomplished by indirect transitions.
Document ID
19830056993
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Aronowitz, S.
(Fairchild Camera and Instrument Corp. Palo Alto, CA, United States)
Date Acquired
August 11, 2013
Publication Date
July 1, 1983
Publication Information
Publication: Journal of Applied Physics
Volume: 54
ISSN: 0021-8979
Subject Category
Solid-State Physics
Accession Number
83A38211
Funding Number(s)
CONTRACT_GRANT: NASA ORDER A-87176-B
Distribution Limits
Public
Copyright
Other

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