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On the optical evaluation of the EL2 deep level concentration in semi-insulating GaAsA practical procedure for the evaluation of the Fermi energy in semi-insulating (SI)GaAs from electrical measurements is presented. This procedure makes it possible to reliably extend the determination of the major deep level (EL2) concentration, by near-infrared absorption measurements, to SIGaAs. Employing this procedure, it is shown that the EL2 concentration in Czochralski-grown GaAs increases monotonically with increasing As/Ga ratio (throughout the conversion from SI n type to semiconducting p-type crystals) rather than abruptly as previously proposed.
Document ID
19830058844
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1063/1.94277
Authors
Walukiewicz, W. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Lagowski, J. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Gatos, H. C. (MIT Cambridge, MA, United States)
Date Acquired
August 11, 2013
Publication Date
July 15, 1983
Publication Information
Publication: Applied Physics Letters
Volume: 43
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
83A40062
Distribution Limits
Public
Copyright
Other

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