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AES study on the chemical composition of ferroelectric BaTiO3 thin films RF sputter-deposited on siliconAES depth profiling data are presented for thin films of BaTiO3 deposited on silicon by RF sputtering. By profiling the sputtered BaTiO3/silicon structures, it was possible to study the chemical composition and the interface characteristics of thin films deposited on silicon at different substrate temperatures. All the films showed that external surface layers were present, up to a few tens of angstroms thick, the chemical composition of which differed from that of the main layer. The main layer had stable composition, whereas the intermediate film-substrate interface consisted of reduced TiO(2-x) oxides. The thickness of this intermediate layer was a function of substrate temperature. All the films showed an excess of barium at the interface. These results are important in the context of ferroelectric phenomena observed in BaTiO3 thin films.
Document ID
19830063391
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Dharmadhikari, V. S.
(New Mexico Univ. Albuquerque, NM, United States)
Grannemann, W. W.
(New Mexico, University Albuquerque, NM, United States)
Date Acquired
August 11, 2013
Publication Date
June 1, 1983
Publication Information
ISSN: 0734-2101
Subject Category
Solid-State Physics
Accession Number
83A44609
Funding Number(s)
CONTRACT_GRANT: NAG1-95
Distribution Limits
Public
Copyright
Other

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