Use of column V alkyls in organometallic vapor phase epitaxy (OMVPE)The use of the column V-trialkyls trimethylarsenic (TMAs) and trimethylantimony (TMSb) for the organometallic vapor phase epitaxy (OM-VPE) of III-V compound semiconductors is reviewed. A general discussion of the interaction chemistry of common Group III and Group V reactants is presented. The practical application of TMSb and TMAs for OM-VPE is demonstrated using the growth of GaSb, GaAs(1-y)Sb(y), Al(x)Ga(1-x)Sb, and Ga(1-x)In(x)As as examples.
Document ID
19830065390
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Ludowise, M. J. (Varian Associates Palo Alto, CA, United States)
Cooper, C. B., III (Varian Associates Corporate Solid State Laboratory, Palo Alto, CA, United States)