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Enhanced adhesion from high energy ion irradiationIt has been found that the adhesion of thin metal films on insulators, semiconductors, and metals could be improved by subjecting the material to a high-energy ion bombardment. Griffith et al. (1982) have first suggested a use of this technique with insulators. The present investigation has the objective to determine the mechanism for the adhesion enhancement. A description is presented of a preliminary transmission electron microscopy (TEM) study of thinned bonded samples of silver on silicon using electron diffraction. It is found that irradiation of a variety of thin film-substrate combinations by heavy ion beams will provide a remarkable improvement in the adherence of the film. The evidence for the mechanism involved in the enhancement of adhesion is discussed.
Document ID
19830065485
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Werner, B. T.
(California Inst. of Tech. Pasadena, CA, United States)
Vreeland, T., Jr.
(California Inst. of Tech. Pasadena, CA, United States)
Mendenhall, M. H.
(California Inst. of Tech. Pasadena, CA, United States)
Qui, Y.
(California Inst. of Tech. Pasadena, CA, United States)
Tombrello, T. A.
(California Institute of Technology Pasadena, CA, United States)
Date Acquired
August 11, 2013
Publication Date
January 1, 1983
Publication Information
ISSN: 0040-6090
Subject Category
Solid-State Physics
Accession Number
83A46703
Funding Number(s)
CONTRACT_GRANT: NSF PHY-79-23638
CONTRACT_GRANT: NAGW-148
CONTRACT_GRANT: NAGW-202
Distribution Limits
Public
Copyright
Other

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