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Structurally stable, thin silicon solar cellsA fabrication process for structurally stable thin solar cell wafers that produce good power output after irradiation is described. The fabrication process is as follows. A 6 mil, circular wafer is oxidized on both sides. One side is then patterned with a rectangular array of holes in the oxide that are nominally 75 mils square and separated by 2 mil spacings. Wells are then etched into the silicon with KOH to a depth of 4 mils, leaving a 2 mil, unetched thickness. Two areas on the surface are left unetched to provide pads for bonding or testing. All oxide is then removed and the rest of the processing is normal; the unetched face is used as the illuminated face. When all other processing is complete, a 2 X 2 cm cell is sawed from the starting wafer leaving a border that is approximately 10 mils wide. The effective thickness, determined by weighing an unmetallized sample, of such a cell is about 2.4 mil.
Document ID
19840021240
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Arndt, R. A.
(Communications Satellite Corp. Clarksburg, MD, United States)
Meulenberg, A.
(Communications Satellite Corp. Clarksburg, MD, United States)
Date Acquired
August 12, 2013
Publication Date
January 1, 1984
Publication Information
Publication: NASA. Lewis Research Center Space Photovoltaic Res. and Technol. 1983
Subject Category
Energy Production And Conversion
Accession Number
84N29309
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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