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Silicon carbide, a high temperature semiconductorElectronic applications are described that would benefit from the availability of high temperature semiconductor devices. Comparisons are made among potential materials for these devices and the problems of each are discussed. Recent progress in developing silicon carbide as a high temperature semiconductor is described.
Document ID
19840035036
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Powell, J. A.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 12, 2013
Publication Date
October 1, 1983
Subject Category
Solid-State Physics
Accession Number
84A17823
Distribution Limits
Public
Copyright
Other

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