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High temperature Hall-effect apparatusA high-temperature Hall-effect apparatus is described which allows measurements up to temperatures greater than 1200 K using the van der Pauw method. The apparatus was designed for measurements on refractory materials having high charge carrier concentrations and generally low mobilities. Pressure contacts are applied to the samples. Consequently, special contacting methods, peculiar to a specific sample material, are not required. The apparatus has been semiautomated to facilitate measurements. Results are presented on n- and p-type silicon.
Document ID
19840037633
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Wood, C.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lockwood, A.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Chmielewski, A.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Parker, J.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Zoltan, A.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Date Acquired
August 12, 2013
Publication Date
January 1, 1984
Publication Information
Publication: Review of Scientific Instruments
Volume: 55
ISSN: 0034-6748
Subject Category
Instrumentation And Photography
Accession Number
84A20420
Distribution Limits
Public
Copyright
Other

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