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Sputtering of the gallium-indium eutectic alloy in the liquid phaseWatson and Haff (1980) have discussed a theory which is designed to explain quantitatively isotopic fractionation effects observed during sputtering of simple or complex targets. This theory is based on the assumption that most of the atoms sputtered from a surface originate in the top monolayer. The present investigation is mainly concerned with a direct experimental test of that assumption. The sputtering of both solid and liquid phases of gallium, indium, and the gallium-indium eutectic alloy is studied. Results obtained with the aid of ion scattering and Auger spectroscopy show that, in agreement with rough theoretical expectations, the surface monolayer of a gallium-indium alloy with 16.5 percent indium in bulk contains more than 94 percent indium, while the next layer can be only slightly enriched.
Document ID
19840037760
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Dumke, M. F.
(California Inst. of Tech. Pasadena, CA, United States)
Tombrello, T. A.
(California Institute of Technology Pasadena, CA, United States)
Weller, R. A.
(Yale University New Haven, CT, United States)
Housley, R. M.
(California Inst. of Tech. Pasadena, CA, United States)
Cirlin, E. H.
(Rockwell International Science Center Thousand Oaks, CA, United States)
Date Acquired
August 12, 2013
Publication Date
January 1, 1983
Publication Information
Publication: Surface Science
Volume: 124
ISSN: 0039-6028
Subject Category
Solid-State Physics
Accession Number
84A20547
Funding Number(s)
CONTRACT_GRANT: NAGW-148
CONTRACT_GRANT: NAGW-202
CONTRACT_GRANT: DE-AC02-76ER-03074
CONTRACT_GRANT: NSF CHE-81-13272
CONTRACT_GRANT: NAS9-11539
CONTRACT_GRANT: NSF PHY-79-23638
Distribution Limits
Public
Copyright
Other

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