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GaInAs-AlInAs heterostructures for optical devices grown by MBEThe band gap of Ga(0.47)In(0.53)As corresponds to an emission wavelength of about 1.65 microns. Lasers have been produced with Al(0.48)In(0.52)As as cladding layers operating at room temperature. The peak emission of Ga(0.47)In(0.53)As can be continuously varied from 1.65 to 1.2 microns by the use of the multiquantum well structures. This range of wavelengths covers the minimum loss and dispersion in optical fibers and will be applicable to integrated optics. Double heterostructure broad area lasers have been fabricated using AlInAs as cladding layers to the GaInAs active layer. Room temperature threshold current densities of 4.3 kA/sq cm have been obtained for lasers with a 4500 A active region. The first data on GaInAs/AlInAs quantum well emitters will be presented. Photoluminescence of 4 K from quantum well layers of 100, 150, and 180 A with 150 A AlInAs barrier layers produced emission at 1.27, 1.35, and 1.41 microns, respectively. Ga(0.47)In(0.52)As quantum well LEDs have also been produced which emit at 1.34 microns.
Document ID
19840038863
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Welch, D. F.
(Cornell Univ. Ithaca, NY, United States)
Wicks, G. W.
(Cornell Univ. Ithaca, NY, United States)
Woodard, D. W.
(Cornell Univ. Ithaca, NY, United States)
Eastman, L. F.
(Cornell University Ithaca, NY, United States)
Date Acquired
August 12, 2013
Publication Date
June 1, 1983
Publication Information
Publication: Journal of Vacuum Science and Technology B
Volume: 1
ISSN: 0734-211X
Subject Category
Electronics And Electrical Engineering
Accession Number
84A21650
Funding Number(s)
CONTRACT_GRANT: NAG1-208
Distribution Limits
Public
Copyright
Other

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