Characterisation of semi-insulating GaAsHole and electron mobilities as functions of temperature and ionised impurity concentration are calculated for GaAs. It is shown that these calculations, when used to analyse electrical properties of semi-insulating GaAs, enable an assessment of the Fermi energy position and ionised impurity concentration to be made. In contrast to previous work, the analysis does not require any phenomenological assumptions.
Document ID
19840040083
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Walukiewicz, W. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Pawlowicz, L. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Lagowski, J. (Massachusetts Inst. of Tech. Cambridge, MA, United States)