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Surface effects in high voltage silicon solar cellsThe surface of low-resistivity silicon solar cells appears to be a major source of dark diffusion current. This region, consisting of the interface and the adjacent heavily doped layer, therefore, prevents attainment of the high open-circuit voltages expected from these cells. This paper describes the experimental effort carried out to reduce the various contributions of dark current from the surface. Analysis of results from this effort points to means of improving cell voltages by changing processing and structures.
Document ID
19840040215
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Meulenberg, A.
(Communications Satellite Corp. Clarksburg, MD, United States)
Arndt, R. A.
(COMSAT Laboratories Clarksburg, MD, United States)
Date Acquired
August 12, 2013
Publication Date
January 1, 1982
Subject Category
Energy Production And Conversion
Accession Number
84A23002
Funding Number(s)
CONTRACT_GRANT: NAS3-22227
Distribution Limits
Public
Copyright
Other

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