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New implantation techniques for improved solar cell junctionsIon implantation techniques offering improved cell performance and reduced cost have been studied. These techniques include non-mass-analyzed phosphorus implantation, argon implantation gettering, and low temperature boron annealing. It is found that cells produced by non-mass-analyzed implantation perform as well as mass-analyzed controls, and that the cell performance is largely independent of process parameters. A study of argon implantation gettering shows no improvement over non-gettered controls. Results of low temperature boron annealing experiments are presented.
Document ID
19840040272
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Spitzer, M. B.
(Spire Corp. Bedford, MA, United States)
Bunker, S. N.
(Spire Corp. Bedford, MA, United States)
Date Acquired
August 12, 2013
Publication Date
January 1, 1982
Subject Category
Energy Production And Conversion
Accession Number
84A23059
Funding Number(s)
CONTRACT_GRANT: NAS7-100
CONTRACT_GRANT: NAS3-22236
Distribution Limits
Public
Copyright
Other

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