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Diffused junction p(+)-n solar cells in bulk GaAs. I Fabrication and cell performanceThis paper describes the fabrication of solar cells made by a simple open tube p(+)-diffusion into bulk n-GaAs. In addition, cell performance is provided as an indicator of the quality of bulk GaAs for this application. Initial results using this technique (12.2 percent efficiency at AM1 for 0.5 sq cm cells) are promising, and indicate directions for materials improvement. It is shown that the introduction of the diffusant (zinc) with point defects significantly affects the material properties and results in an increase in current capability.
Document ID
19840043240
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Bhat, I.
(Rensselaer Polytechnic Inst. Troy, NY, United States)
Bhat, K. N.
(Rensselaer Polytechnic Inst. Troy, NY, United States)
Mathur, G.
(Rensselaer Polytechnic Inst. Troy, NY, United States)
Borrego, J. M.
(Rensselaer Polytechnic Inst. Troy, NY, United States)
Ghandhi, S. K.
(Rensselaer Polytechnic Institute, Troy, NY, United States)
Date Acquired
August 12, 2013
Publication Date
February 1, 1984
Publication Information
Publication: Solid-State Electronics
Volume: 27
ISSN: 0038-1101
Subject Category
Energy Production And Conversion
Accession Number
84A26027
Funding Number(s)
CONTRACT_GRANT: NAG3-188
Distribution Limits
Public
Copyright
Other

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