Lead sulfide - Silicon MOSFET infrared focal plane developmentA process for directly integrating photoconductive lead sulfide (PbS) infrared detector material with silicon MOS integrated circuits has been developed primarily for application in long (greater than 10,000 detector elements) linear arrays for pushbroom scanning applications. The processing technology is based on the conventional PMOS and CMOS technologies with a variation in the metallization. Results and measurements on a fully integrated eight-element multiplexer are shown.
Document ID
19840045680
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Barrett, J. R. (Itek Corp. Optical Systems Div., Lexington, MA, United States)
Jhabvala, M. D. (NASA Goddard Space Flight Center Instrument Div., Greenbelt, MD, United States)