Ion implanted junctions for silicon space solar cellsThis paper reviews the application of ion implantation to emitter and back surface field formation in silicon space solar cells. Experiments based on 2 ohm-cm boron-doped silicon are presented. It is shown that the implantation process is particularly compatible with formation of a high-quality back surface reflector. Large area solar cells with AM0 efficiency greater than 14 percent are reported.
Document ID
19840047356
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Spitzer, M. B. (Spire Corp. Bedford, MA, United States)
Sanfacon, M. M. (Spire Corp. Bedford, MA, United States)
Wolfson, R. G. (Spire Corp. Bedford, MA, United States)