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GaAs dual-gate FET for operation up to K-bandA high-frequency equivalent-circuit model of a GaAs dual-gate FET and analytical expressions for the input/output impedances, transconductance, unilateral gain, and stability factor are presented. It is found that the gain of a dual-gate FET is higher than of a single-gate FET at low frequency but decreases faster as frequency increases because of the capacitive shunting effect of the second gate. A dual-gate power FET suitable for variable-gain-amplifier applications up to K-band has been developed. At 10 GHz, a 1.2-mm-gatewidth device has achieved an output power of 1.1 W with 10.5-dB gain and 31-percent power-added efficiency. At 20 GHz, the same device delivered an output power of 340 mW with 5.3-dB gain. At K-band, a dynamic-gain control range of up to 45 dB was obtained with an insertion phase change of no more than + or 2 degrees for the first 10 dB of gain control.
Document ID
19840049494
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Kim, B.
(Texas Instruments, Inc. Dallas, TX, United States)
Tserng, H. Q.
(Texas Instruments, Inc. Dallas, TX, United States)
Saunier, P.
(Texas Instruments Central Research Laboratories Dallas, TX, United States)
Date Acquired
August 12, 2013
Publication Date
March 1, 1984
Publication Information
Publication: IEEE Transactions on Microwave Theory and Techniques
Volume: MTT-32
ISSN: 0018-9480
Subject Category
Electronics And Electrical Engineering
Accession Number
84A32281
Funding Number(s)
CONTRACT_GRANT: NAS3-22886
Distribution Limits
Public
Copyright
Other

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