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Electrical characteristics of amorphous molybdenum-nickel contacts to siliconThe electrical characteristics of sputtered, amorphous Mo-Ni contacts have been measured on both p- and n-type Si, as functions of composition (30, 54, and 58 at. percent Mo). The contact resistivity on both p(+) and n(+) Si is in the 0.00000 ohm sq cm range. The barrier height for as-deposited samples varies between phi-bp = 0.47-0.42 V on p-type Si and between phi-bn = 0.63-0.68 V on n-type Si, as the composition of the amorphous layer goes from Ni-rich to Mo-rich. The sum phi-bp + phi-bn always equals 1.12 V, within experimental error. After thermal treatment at 500 C for 1/2 h, the contact resistivity changes by a factor of two or less, while the barrier height changes by at most approximately 0.05 V. In light of these results, the amorphous Mo-Ni film makes good ohmic contacts to silicon.
Document ID
19840051136
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Kung, K. T.-Y.
(California Inst. of Tech. Pasadena, CA, United States)
Nicolet, M.-A.
(California Institute of Technology Pasadena, CA, United States)
Suni, I.
(California Institute of Technology, Pasadena, CA; Technical Research Centre of Finland Espoo, Finland)
Date Acquired
August 12, 2013
Publication Date
May 15, 1984
Publication Information
Publication: Journal of Applied Physics
Volume: 55
ISSN: 0021-8979
Subject Category
Solid-State Physics
Accession Number
84A33923
Distribution Limits
Public
Copyright
Other

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