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X-ray photoelectron spectroscopy study of the chemical structure of thermally nitrided SiO2X-ray photoelectron spectroscopy has been used to study the composition of 100-A thermally grown SiO2 films that have been thermally nitrided in ammonia. The SiO(x)N(y)/Si interface was studied both by chemical depth profiling of the oxynitride and by removal of the Si substrate with XeF2. It is found that N is distributed throughout the film, but with the concentration higher at the surface and in a region centered 25 A from the film/substrate interface. The interface region itself is found to be oxygen-rich relative to the rest of the film. Possible models which can explain these results are discussed.
Document ID
19840051245
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Vasquez, R. P.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Hecht, M. H.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Grunthaner, F. J.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Naiman, M. L.
(MIT, Lincoln Laboratory, Lexington MA, United States)
Date Acquired
August 12, 2013
Publication Date
May 15, 1984
Publication Information
Publication: Applied Physics Letters
Volume: 44
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
84A34032
Distribution Limits
Public
Copyright
Other

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