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Electron escape depth variation in thin SiO2 films measured with variable photon energyA double crystal monochromator at the Stanford Synchrotron Radiation Laboratory is used to study the Si/SiO2 interface, using photon energies of hv = 1950-3700 eV. This photon energy range allows interfaces to be observed through oxide layers 50 A thick or more. Variations in electron escape depth and/or oxide density as a function of distance from the interface are observed over the entire kinetic energy range (100-3600 eV). These differences are attributed to a strained oxide layer near the interface.
Document ID
19840054798
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Hecht, M. H.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Grunthaner, F. J.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Pianetta, P.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Johansson, L. I.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lindau, I.
(Stanford University Stanford, CA, United States)
Date Acquired
August 12, 2013
Publication Date
June 1, 1984
Publication Information
Publication: Journal of Vacuum Science and Technology A
Volume: 2
ISSN: 0734-2101
Subject Category
Solid-State Physics
Accession Number
84A37585
Distribution Limits
Public
Copyright
Other

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