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Development of ion-implantation confined, shallow mesa stripe (Pn,Sn)Te/Pb(Te,Se) DH laser diodesPreliminary results of a program to develop ion implantation confined, shallow mesa stripe (Pb,Sn)Te laser diodes are presented. The practicality of using a shallow mesa stripe to produce single mode laser output and to increase the single mode tuning range are demonstrated. The first results of p-type ion implantation in the lead-tin salts are also reported. It is shown that sodium and lithium both can be used to convert n-type Pb(Te,Se) to p-type. The implant and anneal procedures are described, and electrical characteristics of Li-implanted layers are presented.
Document ID
19840060516
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Fonstad, C. G.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Harton, A.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Jiang, Y.-N.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Appelman, H.
(MIT Cambridge, MA, United States)
Date Acquired
August 12, 2013
Publication Date
January 1, 1983
Subject Category
Lasers And Masers
Accession Number
84A43303
Funding Number(s)
CONTRACT_GRANT: NAG1-48
Distribution Limits
Public
Copyright
Other

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