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Plasma Deposition of Doped Amorphous SiliconPair of reports present further experimental details of investigation of plasma deposition of films of phosphorous-doped amosphous silicon. Probe measurements of electrical resistance of deposited films indicated films not uniform. In general, it appeared that resistance decreased with film thickness.
Document ID
19850000210
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Calcote, H. F.
Date Acquired
August 12, 2013
Publication Date
October 1, 1985
Publication Information
Publication: NASA Tech Briefs
Volume: 9
Issue: 2
ISSN: 0145-319X
Subject Category
Materials
Report/Patent Number
NPO-14956
NPO-14955
Accession Number
85B10210
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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