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Measuring Carrier Lifetime in GaAs by LuminescenceLuminescence proposed as nondestructive technique for measuring Shockley-Read-Hall (SRH) recombination lifetime GaAs. Sample irradiated, and luminescence escapes through surface. Measurement requires no mechanical or electrical contact with sample. No ohmic contacts or p/n junctions needed. Sample not scrapped after tested.
Document ID
19850000334
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Von Roos, O.
(Caltech)
Date Acquired
August 12, 2013
Publication Date
January 1, 1986
Publication Information
Publication: NASA Tech Briefs
Volume: 9
Issue: 3
ISSN: 0145-319X
Subject Category
Materials
Report/Patent Number
NPO-16337
Accession Number
85B10334
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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