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Silicon surface passivation by silicon nitride depositionSilicon nitride deposition was studied as a method of passivation for silicon solar cell surfaces. The following three objectives were the thrust of the research: (1) the use of pecvd silicon nitride for passivation of silicon surfaces; (2) measurement techniques for surface recombination velocity; and (3) the importance of surface passivation to high efficiency solar cells.
Document ID
19850024110
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Olsen, L. C.
(Washington Univ. Seattle, WA, United States)
Date Acquired
August 12, 2013
Publication Date
October 1, 1984
Publication Information
Publication: JPL Proc. of the 24th Project Integration Meeting
Subject Category
Energy Production And Conversion
Accession Number
85N32423
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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