Electronic and chemical structure of metal-silicon interfacesThis paper reviews our current understanding of the near-noble metal silicides and the interfaces formed with Si(100). Using X-ray photoemission spectroscopy, we compare the chemical composition and electronic structure of the room temperature metal-silicon and reacted silicide-silicon interfaces. The relationship between the interfacial chemistry and the Schottky barrier heights for this class of metals on silicon is explored.
Document ID
19850028774
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Grunthaner, P. J. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Grunthaner, F. J. (California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)