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Magnesium doping of efficient GaAs and Ga(0.75)In(0.25)As solar cells grown by metalorganic chemical vapor depositionMagnesium has been substituted for zinc in GaAs and Ga(0.75)In(0.25)As solar cells grown by metalorganic chemical vapor deposition (MOCVD). Bis(cyclopentadienyl)magnesium (Cp2Mg) is used as the MOCVD transport agent for Mg. Full retention of excellent material quality and efficient cell performance results. The substitution of Mg for Zn would enhance the abruptness and reproducibility of doping profiles, and facilitate high temperature processing and operation, due to the much lower diffusion coefficient of Mg, relative to Zn, in these materials.
Document ID
19850029315
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Lewis, C. R.
(Varian Associates Palo Alto, CA, United States)
Ford, C. W.
(Varian Associates Palo Alto, CA, United States)
Werthen, J. G.
(Varian Associates, Inc. Palo Alto, CA, United States)
Date Acquired
August 12, 2013
Publication Date
October 15, 1984
Publication Information
Publication: Applied Physics Letters
Volume: 45
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
85A11466
Funding Number(s)
CONTRACT_GRANT: NAS3-22232
Distribution Limits
Public
Copyright
Other

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