NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Kinetics of thermal donor generation in siliconThe generation kinetics of thermal donors at 450 C in Czochralski-grown silicon was found to be altered by high-temperature preannealing (e.g., 1100 C for 30 min). Thus, when compared with as-grown Si, high-temperature preannealed material exhibits a smaller concentration of generated thermal donors and a faster thermal donor saturation. A unified mechanism of nucleation and oxygen diffusion-controlled growth (based on solid-state plate transformation theory) is proposed to account for generation kinetics of thermal donors at 450 C, in as-grown and high-temperature preannealed Czochralski silicon crystals. This mechanism is consistent with the main features of the models which have been proposed to explain the formation of oxygen thermal donors in silicon.
Document ID
19850033629
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Mao, B.-Y.
(Texas Instruments, Inc. Dallas, TX; MIT, Cambridge, MA, United States)
Lagowski, J.
(Texas Instruments, Inc. Dallas, TX, United States)
Gatos, H. C.
(MIT Cambridge, MA, United States)
Date Acquired
August 12, 2013
Publication Date
November 15, 1984
Publication Information
Publication: Journal of Applied Physics
Volume: 56
ISSN: 0021-8979
Subject Category
Solid-State Physics
Accession Number
85A15780
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available