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Reaction of amorphous Ni-W and Ni-N-W films with substrate siliconWiley et al. (1982) have studied sputtered amorphous films of Nb-Ni, Mo-Ni, Si-W, and Si-Mo. Kung et al. (1984) have found that amorphous Ni-Mo films as diffusion barriers between multilayer metallizations on silicon demonstrate good electrical and thermal stability. In the present investigation, the Ni-W system was selected because it is similar to the Ni-Mo system. However, W has a higher silicide formation temperature than Mo. Attention is given to aspects of sample preparation, sample characterization, the interaction between amorphous Ni-W films and Si, the crystallization of amorphous Ni(36)W(64) films on SiO2, amorphous Ni-N-W films, silicide formation and phase separation, and the crystallization of amorphous Ni(36)W(64) and Ni(30)N(21)W(49) layers.
Document ID
19850033630
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Zhu, M. F.
(University of Science and Technology of China, Beijing, People's Republic of China; California Institute of Technology, Pasadena CA, United States)
Suni, I.
(Technical Research Centre of Finland, Espoo, Finland; California Institute of Technology, Pasadena CA, United States)
Nicolet, M.-A.
(California Institute of Technology Pasadena, CA, United States)
Sands, T.
(California, University Berkeley, CA, United States)
Date Acquired
August 12, 2013
Publication Date
November 15, 1984
Publication Information
Publication: Journal of Applied Physics
Volume: 56
ISSN: 0021-8979
Subject Category
Solid-State Physics
Accession Number
85A15781
Distribution Limits
Public
Copyright
Other

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