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SEU of complementary GaAs static RAMs due to heavy ionsThe first measurement of single event upset (SEU) for complementary GaAs static RAMs caused by heavy ions is reported. Upset cross-sections of the circuits for 28 MeV oxygen ions are reported as well as the linear energy transfer (LET) threshold established by using 170 MeV oxygen ions at various angles of beam incidence.
Document ID
19850036406
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Zuleeg, R. (McDonnell-Douglas Corp. Huntington Beach, CA, United States)
Notthoff, J. K. (McDonnell Douglas Microelectronics Center Huntington Beach, CA, United States)
Nichols, D. K. (California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Date Acquired
August 12, 2013
Publication Date
December 1, 1984
Publication Information
Publication: IEEE Transactions on Nuclear Science
Volume: NS-31
ISSN: 0018-9499
Subject Category
Electronics And Electrical Engineering
Accession Number
85A18557
Distribution Limits
Public
Copyright
Other

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