XPS study of the Al/SiO2 interface viewed from the SiO2 sideThe first nondestructive measurement of the chemical and physical characteristics of the interface between bulk SiO2 and thick aluminum films is presented. Both X-ray photoelectron spectroscopy (XPS) and electrical measurements of unannealed resistively evaporated Al films on thermal SiO2 indicate an atomically abrupt interface. Postmetallization annealing (PMA) at 450 C induces reduction of the SiO2 by the aluminum, resulting in the layer ordering SiO2/Al2O3/Si/Al. The XPS measurement is performed from the SiO2 side after removal of the Si substrate after etching with XeF2 gas and thinning of the SiO2 layer with HF:ETOH. This represents a powerful new approach to the study of metal-insulator and other interfaces.
Document ID
19850039390
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Hecht, M. H. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Grunthaner, F. J. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Maserjian, J. (California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)