NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Ion-beam-assisted etching of diamondThe high thermal conductivity, low RF loss, and inertness of diamond make it useful in traveling wave tubes operating in excess of 500 GHz. Such use requires the controlled etching of type IIA diamond to produce grating like structures tens of micrometers deep. Previous work on reactive ion etching with O2 gave etching rates on the order of 20 nm/min and poor etch selectivity between the masking material (Ni or Cr) and the diamond. An alternative approach which uses a Xe(+) beam and a reactive gas flux of NO2 in an ion-beam-assisted etching system is reported. An etching rate of 200 nm/min was obtained with an etching rate ratio of 20 between the diamond and an aluminum mask.
Document ID
19850041038
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Efremow, N. N.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Geis, M. W.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Flanders, D. C.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Lincoln, G. A.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Economou, N. P.
(MIT, Lincoln Laboratory, Lexington MA, United States)
Date Acquired
August 12, 2013
Publication Date
February 1, 1985
Publication Information
Publication: Journal of Vacuum Science and Technology B
Volume: 3
ISSN: 0734-211X
Subject Category
Nonmetallic Materials
Report/Patent Number
AD-A151426
Accession Number
85A23189
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available