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Refractory materials for high-temperature thermoelectric energy conversionTheoretical work of two decades ago adequately explained the transport behavior and effectively guided the development of thermoelectric materials of high conversion efficiencies of conventional semiconductors (e.g., SiGe alloys). The more significant contributions involved the estimaiation of optimum doping concentrations, the reduction of thermal conductivity by solid solution doping and the development of a variety of materials with ZT approx. 1 in the temperature range 300 K to 1200 K. ZT approx. 1 is not a theoretical limitation although, experimentally, values in excess of one were not achieved. Work has continued with emphasis on higher temperature energy conversion. A number of promising materials have been discovered in which it appears that ZT 1 is realizable. These materials are divided into two classes: (1) the rare-earth chalcogenides which behave as itinerant highly-degenerate n-type semiconductors at room-temperature, and (2) the boron-rich borides, which exhibit p-type small-polaronic hopping conductivity.
Document ID
19850042877
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Wood, C.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Emin, D.
(Sandia National Laboratory Albuquerque, NM, United States)
Date Acquired
August 12, 2013
Publication Date
January 1, 1984
Subject Category
Solid-State Physics
Meeting Information
Meeting: Defect properties and processing of high-technology nonmetallic materials
Location: Boston, MA
Start Date: November 14, 1983
End Date: November 17, 1983
Accession Number
85A25028
Funding Number(s)
CONTRACT_GRANT: DE-AC04-76CD-000789
Distribution Limits
Public
Copyright
Other

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