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p-n junction formation in InSb and InAs(1-x)Sb(x) by metalorganic chemical vapor depositionp-n junctions have been fabricated in InSb and InAs(1-x)Sb(x)(0.4 less than x less than 0.7) using metalorganic chemical vapor deposition. These junctions showed soft breakdown in addition to forward characteristics with a diode factor greater than 2. The ternary alloy has a cut-off wavelength in the 8-11-micron range, thus providing a potential material system for detectors covering the 8-12-micron range.
Document ID
19850044066
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1063/1.95640
Authors
Chiang, P. K. (North Carolina State Univ. Raleigh, NC, United States)
Bedair, S. M. (North Carolina State University Raleigh, NC, United States)
Date Acquired
August 12, 2013
Publication Date
February 15, 1985
Publication Information
Publication: Applied Physics Letters
Volume: 46
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
85A26217
Distribution Limits
Public
Copyright
Other

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