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Separate-contact phase-locked semiconductor laser arraysThe novel optoelectronic devices discussed, phase-locked semiconductor laser arrays with separate contacts can perform a variety of near field and far field pattern tailoring functions and control mutual coherence among array elements, as well as lasing wavelength selectivity and tunability. Attention is presently given to experimental results from such arrays, which indicate that the threshold currents of the 4-micron wide lasers employed are typically 60 mA. The separate contacts to each one of them are provided by means of two-level metallization.
Document ID
19850046678
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Katz, J.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Kapon, E.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lindsey, C.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Margalit, S.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Yariv, A.
(California Institute of Technology Pasadena, CA, United States)
Date Acquired
August 12, 2013
Publication Date
January 1, 1985
Subject Category
Lasers And Masers
Meeting Information
Meeting: Lasers ''83
Location: San Francisco, CA
Start Date: December 12, 1983
End Date: December 16, 1983
Accession Number
85A28829
Distribution Limits
Public
Copyright
Other

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