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Heat treatment of bulk gallium arsenide using a phosphosilicate glass capn-type bulk GaAs crystals, capped with chemically vapor-deposited phosphosilicate glass, were heat treated at temperatures in the range of 600 to 950 C. Measurements on Schottky diodes and solar cells fabricated on the heat-treated material, after removal of a damaged surface layer, show an increase in free-carrier concentration, in minority-carrier-diffusion length, and in solar-cell short-circuit current. The observed changes are attributed to a removal of lifetime-reducing acceptorlike impurities, defects, or their complexes.
Document ID
19850050485
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Mathur, G.
(Rensselaer Polytechnic Inst. Troy, NY, United States)
Wheaton, M. L.
(Rensselaer Polytechnic Inst. Troy, NY, United States)
Borrego, J. M.
(Rensselaer Polytechnic Inst. Troy, NY, United States)
Ghandhi, S. K.
(Rensselaer Polytechnic Institute, Troy, NY, United States)
Date Acquired
August 12, 2013
Publication Date
May 15, 1985
Publication Information
Publication: Journal of Applied Physics
Volume: 57
ISSN: 0021-8979
Subject Category
Solid-State Physics
Accession Number
85A32636
Funding Number(s)
CONTRACT_GRANT: NAG3-188
Distribution Limits
Public
Copyright
Other

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