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Theory of the high base resistivity n(+)pp(+) silicon solar cell and its application to radiation damage effectsParticulate radiation in space is a principal source of silicon solar cell degradation, and an investigation of cell radiation damage at higher base resistivities appears to have implication toward increasing solar cell and, therefore, useful satellite lifetimes in the space environment. However, contrary to expectations, it has been found that for cells with resistivities of 84 and 1250 ohm cm, the radiation resistance decreases as cell base resistivity increases. An analytical solar-cell computer model was developed with the objective to determine the reasons for this unexpected behavior. The present paper has the aim to describe the analytical model and its use in interpreting the behavior, under irradiation, of high-resistivity solar cells. Attention is given to boundary conditions at the space-charge region edges, cell currents, cell voltages, the generation of the theoretical I-V characteristic, experimental results, and computer calculations.
Document ID
19850050488
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Goradia, C.
(Cleveland State University Cleveland, OH, United States)
Weinberg, I.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 12, 2013
Publication Date
May 15, 1985
Publication Information
Publication: Journal of Applied Physics
Volume: 57
ISSN: 0021-8979
Subject Category
Energy Production And Conversion
Accession Number
85A32639
Distribution Limits
Public
Copyright
Other

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