The effect of diffusion induced lattice stress on the open-circuit voltage in silicon solar cellsIt is demonstrated that diffusion induced stresses in low resistivity silicon solar cells can significantly reduce both the open-circuit voltage and collection efficiency. The degradation mechanism involves stress induced changes in both the minority carrier mobility and the diffusion length. Thermal recovery characteristics indicate that the stresses are relieved at higher temperatures by divacancy flow (silicon self diffusion). The level of residual stress in as-fabricated cells was found to be negligible in the cells tested.
Document ID
19850053469
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Weizer, V. G. (NASA Lewis Research Center Cleveland, OH, United States)
Godlewski, M. P. (NASA Lewis Research Center Cleveland, OH, United States)